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| SUM110P06-08L New Product Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) -60 FEATURES ID (A)d D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance D 100% Rg Tested rDS(on) (W) 0.008 @ VGS = -10 V 0.0105 @ VGS = -4.5 V -110 -110 APPLICATIONS D Automotive Such As - High-Side Switch - Motor Drives - 12-V Boardnet S TO-263 G G DS Top View D Ordering Information: SUM110P06-08L SUM110P06-08L--E3 (Lead (Pb)-Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentd (TJ = 175_C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energya L = 0 1 mH 0.1 TC = 25_C TA = 25_Cb TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit -60 "20 -110 -75 -200 -65 211 272c 3.75b -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountb Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. Document Number: 73045 S-41506--Rev. A, 09-Aug-04 www.vishay.com Symbol RthJA RthJC Limit 40 0.55 Unit _C/W 1 SUM110P06-08L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = -60 V, VGS = 0 V, TJ = 125_C VDS = -60 V, VGS = 0 V, TJ = 175_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -10 V, ID = -30 A, TJ = 175_C VGS = -4.5 V, ID = -20 A Forward Transconductancea gfs VDS = -15 V, ID = -50 A 20 0.0085 -120 0.0065 0.008 0.0129 0.016 0.0105 S W -60 -1 -3 "100 -1 -50 -250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = -30 V, RL = 0.27 W 30 ID ] -110 A, VGEN = -10 V, Rg = 2.5 W f = 1.0 MHz 1.5 VDS = -30 V, VGS = -10 V, ID = -110 A , , VGS = 0 V, VDS = -25 V, f = 1 MHz 9200 975 760 160 40 36 3 20 190 140 300 4.5 30 285 210 450 ns W 240 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = -50 A, di/dt = 100 A/ms , m IF = -50 A, VGS = 0 V -1.0 60 -3 0.09 -110 -200 -1.5 90 -4.5 0.2 A V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 73045 S-41506--Rev. A, 09-Aug-04 SUM110P06-08L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 5 V 160 I D - Drain Current (A) I D - Drain Current (A) 160 200 Vishay Siliconix Transfer Characteristics 120 4V 80 120 80 40 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 40 TC = 125_C 25_C -55_C 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance 200 TC = -55_C g fs - Transconductance (S) 160 r DS(on) - On-Resistance ( W ) 25_C 125_C 120 0.016 0.020 On-Resistance vs. Drain Current 0.012 VGS = 4.5 V 0.008 VGS = 10 V 80 40 0.004 0 0 10 20 30 40 50 60 70 80 ID - Drain Current (A) 15000 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) 20 VDS = 30 V ID = 110 A Capacitance Gate Charge 12000 C - Capacitance (pF) Ciss V GS - Gate-to-Source Voltage (V) 16 9000 12 6000 8 3000 Crss 0 10 Coss 4 0 0 20 30 40 50 60 0 40 80 120 160 200 240 280 320 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 73045 S-41506--Rev. A, 09-Aug-04 www.vishay.com 3 SUM110P06-08L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.0 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 30 A I S - Source Current (A) Source-Drain Diode Forward Voltage 1.7 rDS(on) - On-Resiistance (Normalized) 1.4 TJ = 150_C 10 TJ = 25_C 1.1 0.8 0.5 -50 -25 0 25 50 75 100 125 150 175 1 0.0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 76 ID = 250 mA 72 100 V (BR)DSS (V) I Dav (a) 68 10 IAV (A) @ TA = 25_C 64 1 IAV (A) @ TA = 150_C 60 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) 56 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 73045 S-41506--Rev. A, 09-Aug-04 SUM110P06-08L New Product THERMAL RATINGS Vishay Siliconix Maximum Drain Current vs. Case Temperature 200 1000 Safe Operating Area Limited by rDS(on) 150 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 100 Limited by Package 10 1 ms 10 ms 100 ms, dc TC = 25_C Single Pulse 50 1 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 73045 S-41506--Rev. A, 09-Aug-04 www.vishay.com 5 |
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